PART |
Description |
Maker |
EBE51RC4AAFA-4C-E EBE51RC4AAFA-5C-E |
512MB Registered DDR2 SDRAM DIMM
|
Elpida Memory
|
W3HG64M72EER806AD7XG W3HG64M72EER665AD7XG W3H64M72 |
512MB - 64Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP Mini-DIMM
|
WEDC[White Electronic Designs Corporation]
|
EBE51RD8AEFA-5C-E EBE51RD8AEFA-4A-E |
Circular Connector; No. of Contacts:5; Series:MS27466; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank) 512MB的注册DDR2 SDRAM DIMM内存400字72位,1个等级)
|
Elpida Memory, Inc.
|
EBE51UD8AEFA-5C-E EBE51UD8AEFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank) 512MB的无缓冲DDR2 SDRAM DIMM内存400字64位,1个等级)
|
Elpida Memory, Inc.
|
M393T6553CZA-CE6 M393T6553CZA-CCC M393T6553CZA-CD5 |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 注册的DDR2 SDRAM内存模块240针脚注册模块12MB的基于C -2位ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
EBE51ED8ABFA-5C-E EBE51ED8ABFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank) KPT SERIES 512MB的无缓冲DDR2 SDRAM DIMM内存400字72位,1个等级)
|
Elpida Memory, Inc.
|
HY5PS12821FP HY5PS12421FP HY5PS12421FP-X HY5PS1216 |
DDR2 SDRAM - 512Mb 512Mb DDR2 SDRAM
|
HYNIX[Hynix Semiconductor]
|
H5PS5162FFR-Y5 H5PS5162FFR-S6 H5PS5162FFR-C H5PS51 |
512Mb DDR2 SDRAM
|
Hynix Semiconductor
|
MT47H32M16CC3B |
512Mb: x4, x8, x16 DDR2 SDRAM
|
Micron Technology
|
EBE52UD6AJUA EBE52UD6AJUA-6E-E EBE52UD6AJUA-8E-E E |
512MB DDR2 SDRAM SO-DIMM
|
Elpida Memory
|
K4T51163QG K4T51083QG K4T51163QG-HCLD5 K4T51163QG- |
512Mb G-die DDR2 SDRAM Specification
|
Samsung semiconductor
|